Numerical Simulation of Microwave GaAs MESFETs
نویسنده
چکیده
A comprehensive physical model is used in a twodimensional numerical simulation of highly doped gallium arsenide MESFETs. Particular attention is paid to the formulation of the numerical schemes and boundary conditions to ensure accurate modelling. A specially formulated current continuity finite difference equation is used, which produces stable, accurate and efficient solutions, even at carrier levels in excess of 10 m in GaAs devices. Long simulation times, greater than 300pS, are feasible using this simulation, which makes it suitable for analysing continuous wave r.f. responses in addition to d.c. and transient phenomena.
منابع مشابه
Analytical Model and Numerical Simulation for the Transconductance and Drain Conductance of GaAs MESFETs
© 2012 Khemissi, licensee InTech. This is an open access chapter distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Analytical Model and Numerical Simulation for the Transconductance and Drain Conductance o...
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